STN3NE06 n - channel 60v - 0.08 w - 3a - sot-223 stripfet ? power mosfet n typical r ds(on) = 0.08 w n exceptional dv/dt capability n avalanche rugged technology n 100 % avalanche tested n application oriented characterization description this power mosfet is the latest development of stmicroelectronics unique "single feature size ? " stip-based process. the resulting transis- tor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications n dc motor control (disk drives,etc.) n dc-dc & dc-ac converters n synchronous rectification ? internal schematic diagram type v dss r ds(on) i d STN3NE06 60 v < 0.100 w 3 a august 1998 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain- gate voltage (r gs = 20 k w ) 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c3a i d drain current (continuous) at t c = 100 o c1.8a i dm ( ) drain current (pulsed) 12 a p tot total dissipation at t c = 25 o c2.5w derating factor 0.02 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 6 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 12 a, di/dt 200 a/ m s, v dd v (br)dss , t j t jmax new rds (on) spec. starting from july 98 1 2 2 3 sot-223 1/9
thermal data r thj-pcb r thj-amb t l thermal resistance junction-pc board max thermal resistance junction-ambient max (surface mounted) maximum lead temperature for soldering purpose 50 60 260 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 3a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 20 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10 v i d = 6a 0.080 0.100 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 3a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 1.5 a 1 3 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 v 760 100 30 1000 140 45 pf pf pf STN3NE06 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 30 v i d = 6 a r g = 4.7 w v gs = 10 v 10 35 15 50 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 40 v i d = 12 a v gs = 10 v 20 5 7 25 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 48 v i d = 12 a r g = 4.7 w v gs = 10 v 7 18 30 10 25 45 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 3 12 a a v sd ( * ) forward on voltage i sd = 3 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c 65 0.18 5.5 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area thermal impedance STN3NE06 3/9
derating curve transfer characteristics static drain-source on resistance output characteristics transconductance gate charge vs gate-source voltage STN3NE06 4/9
capacitance variations normalized on resistance vs temperature source-drain diode forward characteristics normalized gate threshold voltage vs temperature cross-over time STN3NE06 5/9
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 5: test circuit for inductive load switching and diode recovery times fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit STN3NE06 6/9
dim. mm mils min. typ. max. min. typ. max. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.630.650.6724.825.626.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 l 6.3 6.5 6.7 248 255.9 263.8 c c b e l a b e1 l1 f g c d l2 e4 p008b sot-223 mechanical data STN3NE06 7/9
information furnished is believed to be accurate and reliable. however, stmicroe lectronics assumes no responsibi lity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or pat ent rights of stm icroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previou sly supplied. stmicroele ctron ics products are not authorized for use as critical components in life support devices or systems without e xpress written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectro nics ? 1998 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of comp anies australia - brazil - canada - china - france - germany - italy - japan - k orea - m alaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . STN3NE06 8/9
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